RFS

General information

Single-wafer precision plasma strip, descum, and cleaning system - the tool of choice at R&D labs and universities worldwide.

Hot-plate temperature up to 250 °C enables etch rate from 100 Å/min (descum) to 7,000 Å/min (strip).

Achieve higher yields and handles wafers, odd-shape substrates or pieces up to 200 mm with four gas mixing capability.

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Single wafer plasma system supports photoresist strip and descum, polyimide strip, and organic removal.

Precision etch rate and hot-plate temperature control.

Downstream plasma configuration protects against device electrical damage.

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High Temperature Annealing : "A solution designed to replace the single panel vacuum processing method.

Hot-plate temperature up to 250 °C enables etch rate from 100 Å/min (descum) to 7,000 Å/min (strip).

Achieve higher yields and handles wafers, odd-shape substrates or pieces up to 200 mm with four gas mixing capability.

No items found.